Integrated circuit fabricated in a semiconductor substrate

Details Integrated circuit fabricated in a semiconductor substrate Integrated circuit fabricated in a semiconductor substrate

1985-10-23

1988-07-19

Wojciechowicz, Edward J.

357 40, 357 46, 357 34, 357 38, 357 50, 357 51, 357 55, 357 68, 357 86, H01L 2702

Patent

active

047588721

ABSTRACT:
For elimination of undesired leakage current, there is disclosed an integrated circuit fabricated in a semiconductor substrate of a first conductivity type which comprises at least first and second semiconductor elements, the first semiconductor element having a first impurity region of a second conductivity type formed in a surface portion of the semiconductor substrate and a second impurity region of the first conductivity type formed in the first impurity region, wherein the second impurity region is connected to the second semiconductor element by a first conductive layer extending on an insulating layer formed on the semiconductor substrate, a junction of the semiconductor substrate and the first impurity region being located under the first conductive layer.

REFERENCES:
patent: 4319257 (1982-03-01), Beasom
patent: 4405933 (1983-09-01), Avery

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