Integrated circuit die having a power distribution system for at

Details Integrated circuit die having a power distribution system for at Integrated circuit die having a power distribution system for at

1991-10-24

1993-01-26

Laroche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Including additional component in same, non-isolated structure

257499, H01L 2348, H01L 2710

Patent

active

051826291

ABSTRACT:
An integrated circuit die contains a total of at least 10,000 bipolar logica cells that dissipate at least 75 watts of power. To supply such a large amount of power to the logic cells, thin sputtered power busses of 3 .mu.m thickness overlie the logic cells; an insulating layer surrounds the power busses; openings in the insulating layer defined plating regions on the power busses; an electroplating base film lies throughout the plating regions; and, a thick plated conductor, of at least 16 .mu.m thickness, lies on the electroplating base film. By supplying power to the bipolar logic cells via the composite structure of the thin power busses and thick plated conductors, a noise margin problem in the logic cell output signals is avoided. With 16 .mu.m thick plated conductors, the total number of logic cells on the die can be increased until their total power dissipation reaches 75 watts. With 21 .mu.m thick plated conductors, total die power can be increased to 100 watts.

REFERENCES:
patent: 4825276 (1989-04-01), Kobayashi
patent: 4947229 (1990-08-01), Tanaka et al.
patent: 4951111 (1990-08-01), Yamamoto
patent: 4984058 (1991-01-01), Miyaoka et al.

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