Integrated circuit devices including a resistor pattern

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S537000, C257S536000, C257S380000

Reexamination Certificate

active

06844610

ABSTRACT:
Methods are provided for forming an integrated circuit device including a resistor pattern having a desired resistance value. A low resistive layer is formed on an integrated circuit substrate. An insulating layer is formed on the low resistive layer opposite the integrated circuit substrate. A high resistive layer, which may have a specific resistance of at least about a hundred μΩ•cm, is formed on the insulating layer opposite the low resistive layer. The low resistive layer, the insulating layer and the high resistive layer define the resistor pattern in a region of the integrated circuit substrate. Integrated circuit devices including resistor patterns as provided by the methods are also provided and methods for forming metal contacts to the resistor pattern are also provided.

REFERENCES:
patent: 6083785 (2000-07-01), Segawa et al.
patent: 6696733 (2004-02-01), Koike et al.

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