Integrated circuit devices and methods employing amorphous silic

Details Integrated circuit devices and methods employing amorphous silic Integrated circuit devices and methods employing amorphous silic

1995-12-20

2000-02-29

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

313336, H01L 310312

Patent

active

060312505

ABSTRACT:
Integrated circuits, including field emission devices, have a resistor element of amorphous Si.sub.x C.sub.1-x wherein 0<x<1, and wherein the Si.sub.x C.sub.1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.

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