Integrated circuit device with isolated circuit elements

Details Integrated circuit device with isolated circuit elements Integrated circuit device with isolated circuit elements

1997-05-09

1998-06-16

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

357516, 357296, H01L 2900

Patent

active

057675619

ABSTRACT:
A device with at least one noise-sensitive element, at least one noise-generating element, and a porous silicon barrier in the substrate is disclosed. The porous silicon barrier isolates the noise-sensitive element from the signals coupled into the substrate by the noise-generating element. A process for making this device is also disclosed.

REFERENCES:
patent: 4627883 (1986-12-01), Hoemstrom et al.
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5475255 (1995-12-01), Joardan et al.
patent: 5485029 (1996-01-01), Crabbe et al.
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5512777 (1996-04-01), Endo
patent: 5548150 (1996-08-01), Omura et al.
patent: 5623159 (1997-04-01), Monk et al.
"Stress in Oxidized Porous Silicon Layers", by Barla, K. et al., J. Appl. Phys., (2) pp. 439-441, (Jan. 15, 1986).
"Determination of Lattice Parameter and Elastic Properties of Porous Silicon by X-Ray Diffraction", by Barla, K. et al., Journal of Crystal Growth, 68, pp. 727-732 (1984).
"A Post Processing Method for Reducing Substrate Coupling in Mixed-Signal Integrated Circuits", by Basedau, P. et al., 1995 Symposium on VLSI Circuits Digetst of Technical Papers, pp. 41-42.
"Full Isolation Technology by Porous Oxidized Silicon and its Application to LSIs", by Imai, K. et al., IEEE, IEDM 81 pp. 376-379, (1981).
"Effect of Substrate Material on Crosstalk in Mixed Analogy/Digital Integrated Circuits", by Merrill, R.B. et al., IEEE, IEDM 94, pp. 433-436.
"A New Silicon-on-Insulator Structure Using a Silicone Molecular Beam Epitaxial Growth on Porous Silicon", by Konaka, S. et al., Musashino Electrical Communication Laboratory, Nippon Telephone and Telegraph Public Corporation, Tokyo 180, pp. 86-88.
"The Islands Method --A Manufacturabe Porous Silicone SOI Technology" by Zorinksy, E.J. et al., IEEE, IEDM 86, pp. 431-434 (1986).
"A New Dielectric Isolation Method Using Porous Silicon" by Imai, K., Solid State Electronics, vol. 24, pp. 159-164 (1981).
"Complete Dielectric Isolation by Highly Selective and Shelf-Stopping Formation of Oxidized Porous Silicon", by Holmstrom, R.P. et al., Appl. Phys. Lett., 42 (4), pp. 386-388 (1983).
"Extended Study of Crosstalk in SOI-SIMOX Substrates", by Viviani, A. et al., IEEE, IEDM 95, pp. 713-716 (1995).

Affiliated with

Also associated with

Rating

Integrated circuit device with isolated circuit elements does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit device with isolated circuit elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit device with isolated circuit elements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1729188