Integrated circuit device with inductor incorporated therein

Details Integrated circuit device with inductor incorporated therein Integrated circuit device with inductor incorporated therein

1996-11-19

1998-04-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 4, 257528, 257531, H01L 2900

Patent

active

057367493

ABSTRACT:
The present invention is directed to a semiconductor device formed on a silicon substrate that has at least one inductor integrated therewith. The inductor is formed on a region of porous silicon formed in the substrate. The porous silicon reduces the capacitive and inductive coupling of the inductor to the substrate. Therefore, the integrated inductors of the present invention are capable of having a higher inductance at higher resonance frequencies (i.e. 2 GHz or greater) than conventional inductors. Devices with inductors that operate at these frequencies are desirable for wireless applications. The present invention is also directed to a process for fabricating the device in which the porous silicon is formed using an annodization technique, and wherein the porous silicon so formed is maintained in an essentially unoxidized state throughout the remainder of the process.

REFERENCES:
patent: 5508559 (1996-04-01), Anderson et al.
patent: 5544412 (1996-08-01), Romero et al.
patent: 5548150 (1996-08-01), Omura et al.
patent: 5567954 (1996-10-01), Dobson et al.
"An Isolation Technique Using Oxidized Porous Silicon," Unagami, T. et al., JARECT vol. 8, Semiconductor Technologies, J. Nishizawa (ed.) OHMSHA Ltd. and North-Holland Publishing Co., pp. 139-154.
"Large Suspended Inductors on Silicon and Their Use in a 2 .mu.m CMOS RF Amplifier", Chang, J.Y.-C., IEEE Electron Device Letters, No. 5, pp. 246-248 (May 1993).
"The Formation of Porous Silicon by Chemical Stain Etches," Beale, M.I.J. et al., Journal of Crystal Growth 75, pp. 408-414 (1986).
"FIPOS (Full Isolation by Porous Oxidized Silicon) Technology and its Application to LSI's", Imai, K. et al., IEEE Transactions on Electron Devices, vol. ED-31, pp. 297-302 (Mar. 1984).
"Atmospheric Impregnation of Porous Silicon at Room Temperature", Canham, L. T. et al., J. Appl. Phys., 70(1), pp. 422-432 (Jul. 1991).

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