Integrated circuit device with bi-level contact landing pads

Details Integrated circuit device with bi-level contact landing pads Integrated circuit device with bi-level contact landing pads

1992-02-03

1994-03-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257756, 257781, H01L 2348, H01L 2346, H01L 2962, H01L 2954

Patent

active

052987922

ABSTRACT:
A semiconducting wafer has an active area and first and second field oxide regions adjacent opposite sides of the active area. A first poly layer is deposited to form a first landing pad member electrically contacting the active area and overlapping the first field oxide region. Then an insulating oxide layer is deposited, followed by a second poly layer to form a second landing pad member overlapping the first landing pad member and the second field oxide region. A contact etch is performed with the landing pad members acting as an etch stop. A contact is deposited to electrically contact the landing pad members.

REFERENCES:
patent: 3921282 (1975-11-01), Cunningham et al.
patent: 4500906 (1985-02-01), Ohno et al.
patent: 4544941 (1985-10-01), Ariizumi et al.
patent: 4617193 (1986-10-01), Wu
patent: 4733289 (1988-03-01), Tsurumaru
patent: 4961104 (1990-10-01), Hirakawa

Affiliated with

Also associated with

Rating

Integrated circuit device with bi-level contact landing pads does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit device with bi-level contact landing pads, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit device with bi-level contact landing pads will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-794439