Integrated circuit device which includes a continous layer which

Details Integrated circuit device which includes a continous layer which Integrated circuit device which includes a continous layer which

1986-02-26

1987-12-22

Carroll, J.

357 239, 357 41, 357 59, 357 54, 357 71, H01L 2978, H01L 2702, H01L 2348

Patent

active

047149515

ABSTRACT:
The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi.sub.2 while the remainder of the slice is covered with portions of a layer of tantalum oxide Ta.sub.2 O.sub.5, especially on the sides of the grids of polycrystalline silicon and on the thick oxide and an aluminum alloy layer comes into contact with the tantalum silicide to form connections with the portions of tantalum silicide.

REFERENCES:
patent: 3690945 (1972-09-01), Kuisl
patent: 4305200 (1981-12-01), Fu et al.
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4374700 (1983-02-01), Scott et al.
patent: 4543592 (1985-09-01), Itsumi et al.
patent: 4574467 (1986-03-01), Halfacre et al.
"Selective Oxidation of Titanium while forming Titanium-Silicide at Polysilicon and Diffusions", IBM Technical Disclosure Bulletin, vol. 27, (1985), pp. 5870-5875.
F. Mohammadi, "Silicides for Interconnection Technology", Solid State Technology, (Jan. 1981), pp. 65-72.
R. B. Laibowitz et al., "Fabrication of Vias in a Multilayered Metallization in LSI Technology", IBM Technical Disclosure Bulletin, vol. 21, (1979), pp. 5051-5052.
T. M. Reith, "Improved Reliability for Al-Cu-Si Overlay Films", IBM Technical Disclosure Bulletin, vol. 20, (1977), pp. 1373-1374.
E. E. Conrad, "Aluminum-Copper-Silicon Semiconductor Metallurgy", IBM Technical Disclosure Bulletin, vol. 13, (1971), p. 3661.

Affiliated with

Also associated with

Rating

Integrated circuit device which includes a continous layer which does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit device which includes a continous layer which, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit device which includes a continous layer which will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-821084