Integrated circuit device particularly adapted for high voltage

Details Integrated circuit device particularly adapted for high voltage Integrated circuit device particularly adapted for high voltage

1990-12-14

1992-05-12

James, Andrew J.

357 42, 357 234, 357 68, 357 71, H01L 2702

Patent

active

051132362

ABSTRACT:
A silicon on insulator of integrated circuit comprising a plurality of components typically adopted for high voltage application having a semiconductor substrate of a first conductivity type, an insulating layer provided on the substrate, a semiconductor layer provided on the insulating layer, a number of laterally separated circuit elements forming parts of a number of subcircuits provided in the semiconductor layer, a diffusion layer of a second conductivity type opposite to that of the first conductivity type provided in the substrate and laterally separated from all the other circuit elements and means for holding the diffusion layer at a voltage at least equal to that of the highest potential of any of the subcircuits present in the integrated device.

REFERENCES:
patent: 4883543 (1989-11-01), Grossen, Jr. et al.
patent: 4884116 (1989-11-01), Shirai
patent: 4893159 (1990-01-01), Suzuki et al.
patent: 4962413 (1990-10-01), Yamazaki eet al.
Ratnam "Novel Silicon-on-Insulator Mosfet for High-Voltage Integrated Circuits" Electronics Letters vol. 25 No. 8, Apr. 13, 1989 pp. 536-537.
Nakashima et al "High-Voltage CMOS SIMOX Technology and its Application to a BSH-LSI" IEEE Transactions on Electron Devices vol ED 33 No. 1 Jan. 1986 pp. 126-132.
Rumennik "Power Devices are in the Chips" IEEE Spectrum, vol. 22, Jul. 1985 pp. 27, 29, 31, and 33.

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