Integrated circuit device, method of manufacturing the same...

Details Integrated circuit device, method of manufacturing the same... Integrated circuit device, method of manufacturing the same...

2005-03-23

2008-12-09

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257S536000, C257S537000, C257SE27016, C438S048000, C438S054000, C438S384000

Reexamination Certificate

active

07462921

ABSTRACT:
A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.

REFERENCES:
patent: 2002/0139784 (2002-10-01), Tsuchiya et al.
patent: 01-302849 (1989-12-01), None
patent: 11-330051 (1999-11-01), None

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