Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support
Reexamination Certificate
2007-10-08
2008-09-30
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Metallic housing or support
C257SE23101, C257S719000, C257S720000, C257SE23106
Reexamination Certificate
active
07429502
ABSTRACT:
An integrated circuit device incorporating a metallurgical bond to enhance thermal conduction to a heat sink. In a semiconductor device, a surface of an integrated circuit die is metallurgically bonded to a surface of a heat sink. In an exemplary method of manufacturing the device, the upper surface of a package substrate includes an inner region and a peripheral region. The integrated circuit die is positioned over the substrate surface and a first surface of the integrated circuit die is placed in contact with the package substrate. A metallic layer is formed on a second opposing surface of the integrated circuit die. A preform is positioned on the metallic layer and a heat sink is positioned over the preform. A joint layer is formed with the preform, metallurgically bonding the heat sink to the second surface of the integrated circuit die.
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Archer, III Vance D.
Azimi Kouros
Chesire Daniel Patrick
Gladden Warren K
Kang Seung H.
Agere Systems Inc.
Ho Tu-Tu V
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