Integrated circuit device having improved substrate capacitance

Details Integrated circuit device having improved substrate capacitance Integrated circuit device having improved substrate capacitance

1991-10-07

1992-09-29

Prenty, Mark V.

357 68, 357 51, H01L 3902, H01L 2348, H01L 2702

Patent

active

051517752

ABSTRACT:
An integrated circuit device having improved substrate capacitance isolation for use in a ultra low capacitance probe or an input to an oscilloscope or the like has an electrically conductive layer formed directly underneath an input node on the integrated circuit. The electrically conductive layer has a geometry substantially equal to the input node and is driven by a voltage output from a high impedance unity gain circuit. In one embodiment, the electrically conductive layer is formed in the first metal layer of the integrated circuit while an alternate embodiment an emitter region of a semiconductor device in the high impedance circuit is used as the electrically conductive layer.

REFERENCES:
patent: 4646002 (1987-02-01), Tuszyski

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