Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-06-27
1996-12-17
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257291, 257347, 257352, 349 42, H01L 310392, H01L 3120, H01L 31113, G02F 11343
Patent
active
055856470
ABSTRACT:
A thin-film transistor device comprising a pixel section including a plurality of pixel electrodes arranged in rows and columns on a substrate and a plurality of thin-film transistors of reverse stagger type, connected as switching elements to the pixel electrodes, respectively, and a drive section including a plurality of thin-film transistors of coplanar type, each having a gate insulating film, for driving the thin-film transistors of the reverse stagger type. A lower insulating film is located beneath the thin-film transistors of the reverse stagger type. The lower insulating film and the gate insulating films of the thin-film transistors of the coplanar type are formed of a first insulating film provided on the substrate.
REFERENCES:
patent: 5076666 (1991-12-01), Katayama et al.
Kamimura Takaaki
Kawakyu Yoshito
Nakajima Mitsuo
Suzuki Mitsuaki
Crane Sara W.
Kabushiki Kaisha Toshiba
Tang Alice W.
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