Integrated circuit device fabrication by plasma etching

Details Integrated circuit device fabrication by plasma etching Integrated circuit device fabrication by plasma etching

1997-08-14

1998-11-17

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438729, 438710, 216 68, 216 71, H01L 21302

Patent

active

058376151

ABSTRACT:
A trench etching process is disclosed in which a substrate is etched under conditions that promote forward sputtering of mask material in a plasma reactor having at least three electrodes. The forward sputtering impedes etching of trench sidewalls by depositing a protective layer of mask material on the sidewalls of a trench being formed. By controlling the amount of forward sputtering, one can control the trench profile and aspect ratio (depth to width). By employing forward sputter etching in a three or more electrode reactor, trenches of less than one micron in width and having aspect ratios of at least 2.5:1 are formed. Such trenches are used in trench capacitors of high density DRAMs. A disclosed plasma reactor includes a grounded first electrode which forms part of the reactor's enclosure, a coiled second electrode disposed above and separated from the reactor enclosure by a dielectric shield, and a planar third electrode located below the substrate to be etched. A plasma is generated by providing radio frequency energy from the second electrode to the enclosure interior. The charged species from that plasma are directed to the substrate by applying a bias between the first and third electrodes.

REFERENCES:
patent: 5277751 (1994-01-01), Ogle
patent: 5401350 (1995-03-01), Patrick et al.
Plasma Etching An Introduction, Edited by Dennis M. Manos, Plasma Physics Laboratory, Princeton University, Princeton, New Jersey and Daniel L. Flamm AT&T Bell Laboratories, Murray Hill, New Jersey, p. 37.

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