Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1997-02-07
1998-02-03
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257371, 257373, H01L 2900, H01L 2976
Patent
active
057147965
ABSTRACT:
An output driver is implemented by a complementary inverter circuit responsive to an output data signal for selectively charging and discharging an external capacitive load, and the complementary inverter circuit has a p-channel enhancement type field effect transistor formed in an n-type well defined in a p-type silicon substrate reversely biased and an n-channel enhancement type field effect transistor formed in a p-type well nested with a reversely biased n-type well defined in the p-type silicon substrate in spacing relation to the n-type well assigned to the p-channel enhancement type field effect transistor, thereby perfectly isolating the p-channel enhancement type field effect transistor from a noise propagated from a ground voltage line to the p-type well assigned to the n-channel enhancement type field effect transistor.
REFERENCES:
patent: 4878096 (1989-10-01), Shirai et al.
patent: 5148255 (1992-09-01), Nakazato et al.
patent: 5157281 (1992-10-01), Santin et al.
patent: 5281842 (1994-01-01), Yasuda et al.
patent: 5336915 (1994-08-01), Fujita et al.
patent: 5374838 (1994-12-01), Sawada et al.
patent: 5404042 (1995-04-01), Okumura et al.
"Techniques for Latch-up Analysis in CMOS IC's based on Scanning Electron Microscopy", by C. Canali, Microelectronics & Reliability, vol. 28, No. 1, pp. 119-161, 1988.
"A 45-ns 16-Mbit DRAM with Triple-Well Structure", by S. Fujii et al., Journal of Solid-State Circuits, vol. 24, No. 5 Oct. 1989.
NEC Corporation
Whitehead Carl W.
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