Integrated circuit device and process with tin-gate transistor

Details Integrated circuit device and process with tin-gate transistor Integrated circuit device and process with tin-gate transistor

1986-12-05

1989-03-21

Carroll, J.

357 41, 357 42, 357 51, 357 71, H01L 2702, H01L 2348

Patent

active

048148547

ABSTRACT:
A new integrated circuit structure which includes two types of active devices: a first set of IGFETs has silicide gates, and the second set has TiN gates. The same TiN thin film layer also provides local interconnect. Optionally the TiN-gate devices may be used for high-voltage devices and the silicide-gate devices used for logic devices.

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G. T. Goeloe et al. "Vertical Single-Gate CMOS Inoertens on Laser-Processed Multilayer Substracts", IEDM (1981) pp. 554-556.
Kaneko et al., "Novel Submicron MOS Devices by Self-Aligned Nitridation of Silicide", Technical Digest of IEDM 1985 (IEEE) pp. 208-211 (Dec. 1, 1985).
M. Wittmer et al., "Applications of TiN Thin Films in Silicon Devices", Materials Research Society Symposium, Nov. 1984, pp. 397-405.
Ting, "TiN Formed by Evaporation as a Diffusion Barrier Between Al and Si", J. Vac-Sci. Technol. 21 (1), May/Jun. 1982, pp. 14-18.

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