Integrated circuit device and process with tin capacitors

Details Integrated circuit device and process with tin capacitors Integrated circuit device and process with tin capacitors

1986-12-05

1989-03-07

Carroll, J.

357 235, 357 236, 357 51, 357 67, 357 71, H01L 2978, H01L 2702, H01L 2934, H01L 2343

Patent

active

048110787

ABSTRACT:
A new integrated circuit structure, wherein a TiN thin film layer 129 and another patterned thin film layer 124 preferably comprising polysilicon are separated (in some locations) by a thin dielectric 132 to define capacitors. At various other locations, the TiN layers 129 also makes contact to the polysilicon layer 124 (which will be silicide-clad at these locations), makes contact to n+ substrate regions 134 and p+ substrate regions 136, and also to provide a contact pad for a third patterned thin film conductor layer which overlies the other two. One important class of embodiments provides a floating-memory cell. wherein the floating gate 120 is made of polysilicon, but the control gate 142 consists predominantly of titanium nitride. A novel process for forming the titanium nitride control gate 142 and simultaneously forming titanium nitride local interconnect lines 149 is also disclosed.

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