Integrated circuit device and electronic instrument

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...

Reexamination Certificate

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Details

C257S371000, C257S369000, C257S336000

Reexamination Certificate

active

07838960

ABSTRACT:
An integrated circuit device includes a high-speed I/F circuit block which transfers data through a serial bus, and a driver logic circuit block which generates a display control signal. A first-conductivity-type transistor included in the high-speed I/F circuit block is formed in a second-conductivity-type well, and a second-conductivity-type transistor included in the high-speed I/F circuit block is formed in a first-conductivity-type well formed in a second-conductivity-type substrate to enclose the second-conductivity-type well. A first-conductivity-type transistor and a second-conductivity-type transistor included in the driver logic circuit block are formed in a region other than a region of the first-conductivity-type well for the high-speed interface circuit block.

REFERENCES:
patent: 5336915 (1994-08-01), Fujita et al.
patent: 7259740 (2007-08-01), Haga et al.
patent: 2002/0011998 (2002-01-01), Tamura
patent: 2006/0237727 (2006-10-01), Haga et al.
patent: 2007/0057826 (2007-03-01), Yajima et al.
patent: 2001-222249 (2001-08-01), None
patent: 2004-046054 (2004-02-01), None

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