Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2006-08-30
2010-11-23
Shingleton, Michael B (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S371000, C257S369000, C257S336000
Reexamination Certificate
active
07838960
ABSTRACT:
An integrated circuit device includes a high-speed I/F circuit block which transfers data through a serial bus, and a driver logic circuit block which generates a display control signal. A first-conductivity-type transistor included in the high-speed I/F circuit block is formed in a second-conductivity-type well, and a second-conductivity-type transistor included in the high-speed I/F circuit block is formed in a first-conductivity-type well formed in a second-conductivity-type substrate to enclose the second-conductivity-type well. A first-conductivity-type transistor and a second-conductivity-type transistor included in the driver logic circuit block are formed in a region other than a region of the first-conductivity-type well for the high-speed interface circuit block.
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Abe Masaaki
Komatsu Fumikazu
Sawada Mitsuaki
Yajima Hidehiko
Yonezawa Takemi
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Shingleton Michael B
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