Integrated circuit device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307304, 357 23, 357 41, 357 59, 365150, 365182, 365187, H01L 2978, H01L 2960, G11C 1124, G11C 1140

Patent

active

040841081

ABSTRACT:
A semiconductor integrated circuit 3 transistor/bit cell includes two MOS transistors having superposed and insulated gate electrodes overlying the substrate at the portion between the diffused regions, so that the memory can be fabricated in a reduced area.

REFERENCES:
patent: 3436623 (1969-04-01), Beer
patent: 3585613 (1971-06-01), Palfi
patent: 3593037 (1971-07-01), Hoff
patent: 3691537 (1972-09-01), Burgess et al.
patent: 3720922 (1973-03-01), Kosonocky
patent: 3810125 (1974-05-01), Stein
patent: 3891190 (1975-06-01), Vadasz

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-991143

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.