Integrated circuit device

Details Integrated circuit device Integrated circuit device

2007-07-03

2007-07-03

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257SE23080, C257SE23142, C257SE27016, C257SE27104, C257SE27081, C257S536000, C257S537000, C257S774000, C257S470000, C257S664000, C257S662000, C257S751000, C257S700000, C257S758000

Reexamination Certificate

active

11038094

ABSTRACT:
In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.

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Sidhwa, Ardy et al.; Impact of Residual By-Products from Tungsten Film Deposition on Process Integration Due to Nonuniformity of the Tungsten Film; May/Jun. 2002 Journal of Vacuum Science Technology; p. 934.

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