Integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S509000, C257S515000

Reexamination Certificate

active

07038290

ABSTRACT:
An integrated circuit device comprising:a body of a first solid material having an upper surface and a major bottom surface;a pocket of a second solid material having a top surface and a side surface, and a bottom surface which contacts a selected portion of said upper surface on said body;said first and second solid materials being so selected as to form, where said pocket contacts said body at said selected portion of said upper surface, an electronic interfacial barrier which is substantially conductive under an applied bias of at least one selected polarity; anda solid electrically insulating region which meets said barrier and adjoins both said body and at least a line on said side surface of said pocket;wherein at least a part of said solid electrically insulating region comprises nitrogen located at least below the level of said electronic interfacial barrier.

REFERENCES:
patent: 2911706 (1959-11-01), Wertwijn
patent: 2980830 (1961-04-01), Shockley
patent: 3098160 (1963-07-01), Noyce
patent: 3136897 (1964-06-01), Kaufman
patent: 3209428 (1965-10-01), Barbaro
patent: 3233305 (1966-02-01), Dill
patent: 3283171 (1966-11-01), Seeds
patent: 3321340 (1967-05-01), Murphy
patent: 3345222 (1967-10-01), Nomura et al.
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3376172 (1968-04-01), Byczkowski
patent: 3386865 (1968-06-01), Doo
patent: 3411051 (1968-11-01), Kilby
patent: 3426253 (1969-02-01), LaRocque et al.
patent: 3430109 (1969-02-01), Li
patent: 3440717 (1969-04-01), Hill
patent: 3492174 (1970-01-01), Nakamura et al.
patent: 3500139 (1970-03-01), Frouin et al.
patent: 3515956 (1970-06-01), Martin et al.
patent: 3520139 (1970-07-01), Elkind et al.
patent: 3581161 (1971-05-01), Cunningham et al.
patent: 3585714 (1971-06-01), Li
patent: 3586532 (1971-06-01), MacRae
patent: 3586542 (1971-06-01), MacRae
patent: 3622382 (1971-11-01), Brack et al.
patent: 3648125 (1972-03-01), Peltzer
patent: 3752711 (1973-08-01), Kooi et al.
patent: 3755001 (1973-08-01), Kooi
patent: 3852104 (1974-12-01), Kooi et al.
patent: RE28653 (1975-12-01), Murphy
patent: 3970486 (1976-07-01), Kooi
patent: 3982315 (1976-09-01), Kubo
patent: 4101344 (1978-07-01), Kooi et al.
patent: 4139442 (1979-02-01), Bondur et al.
patent: 4916513 (1990-04-01), Li
patent: 5040034 (1991-08-01), Murakami et al.
patent: 5082793 (1992-01-01), Li
patent: 5254218 (1993-10-01), Roberts et al.
patent: 5361326 (1994-11-01), Aparicio, IV et al.
patent: 1086607 (1967-10-01), None
patent: 1214203 (1970-12-01), None
patent: S34-2529 (1959-04-01), None
patent: 42-11772 (1967-07-01), None
P. J. Stiles et al., “Schottky Barrier Diode”, IBM Technical Disclosure Bulletin, vol. 11 No. 1 (Jun. 1968) p. 20.
S. S. Brenner, “The Growth of Whiskers by the Reduction of Metal Salts”, Acta Metallurgica, vol. 4 (Jan. 1956) pp. 62-74.
Y. Doo et al., “Making Monolithic Semiconductor Structures for Integrated Circuits Using Composite Insulation and Junction Isolation Techniques”, IBM Technical Disclosure Bulletin, vol. 8 No. 4 (Sep. 1965) pp. 659-660.
Jones, R.E. and Doo, Y., “A Composite Insulator-Junction Isolation,” Electrochemical Technology, May-Jun., 1967.
Brenner, S.S., “The Growth of Whiskers by the Reduction of Metal Salts,” Acta Metallurgica, vol. 4, Jan. 1956, pp. 62-74.
Stiles, P.J., et al., “Schottky Barrier Diode,” IBM Technical Disclosure Bulletin, vol. 11 No. 1, Jun. 1968, p. 20.
Doo, Y., et al., “Making Monolithic Semiconductor Structures for Integrated Circuits Using Composite Insulation and Junction Isolation Techniques,” IBM Technical Disclosure Bulletin, vol. 8 No. 4, Sep. 1965, pp. 659-660.
Phillips, A.B., “Transistor Engineering,” McGraw-Hill, 1962, pp. 111-115.
Burrill, J.T., et al., “Ion Implantation as a Production Technique,” IEEE Transactions on Electron Devices, vol. Ed-14, No. 1, Jan. 1967, pp. 10-17.
Buchanan, B., et al., “High Energy (1 to 2.5 Mev) Ion Implantation For Obtaining Novel Semi-Conductor Junction Structures,” Air Force Cambridge Res. Labs., Off. of Aerospace Research, Bedford, MA, pp. 649-684.
Gibbons, J.F., “Ion Implantation in Semiconductors-Part I Range Distribution Theory and Experiments,” Proceedings of the IEEE, vol. 56, No. 3, Mar. 1968, pp. 295-318.
NOTES, Solid-State Electronics, Pergamon Press, 1967, vol. 10, pp. 1105-1108, Printed in Great Britain.
Kennedy, D.P., et al., “Calculations of Impurity Atom Diffusion Through a Narrow Diffusion Mask Opening,” IBM Journal, Jan. 1966, pp. 6-12.
Appels, J.A., et al., Local Oxidation of Silicon and Its Application in Semiconductor-Device Technology, Philips Res. Repts. 25, 1970, pp. 118-132.
Doo, V.Y., Silicon Nitride, A New Diffusion Mask, IEEE Transactions on Electron Devices, vol. Ed.-13, No. 7, Jul. 1966, pp. 561-563.
McDonald, et al., “Measurement of the Depth Of Diffused Layers In Silicon By The Grooving Method,”Journal of the Electrochemical Society, vol. 109, No. 2, Feb. 1962, pp. 141-144—see Fig. 2 and p. 143.
“Integrated Circuits Design Principles And Fabrication,” McGraw-Hill Book Co. Inc., 1965, pp. 127-131; 145-150; 174-185—Fig. 5-4(a), p. 131); Fig. 5-23, p. 146; Fig. 5-25-5-27, pp. 147-148; Fig. 7-1, p. 175; Fig. 7-2, p. 176; Fig. 7-6(a), p. 179.
“Isolation Method Shrinks Bipolar ICs,”Electronics, McGraw-Hill, Mar. 1, 1971, pp. 52-55, Fig. 5-6, p. 55.
“Diffusion Depths In Silicon Measured Using Cylindrical Grooves,” The American Physical Society Abstracts from the Epitome Of The 1956 Monterey Meeting, Session H, Nov. 1956.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3648215

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.