Integrated circuit device

Details Integrated circuit device Integrated circuit device

1996-01-17

1997-10-07

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257664, 257729, H01L 2334

Patent

active

056751842

ABSTRACT:
An integrated circuit device includes a substrate; circuit elements including an active element and a bias line for applying a DC bias voltage to the active element, disposed on the substrate; a thermoplastic material layer disposed on a region of the substrate; and a magnetic substance layer disposed on a region of the substrate including a region of the bias line, and adhered to and supported by the thermoplastic material layer. In this structure, the magnetic substance layer can be formed in an appropriate shape and at an appropriate position on the bias line according to the oscillation characteristics of the active element, such as a transistor, and the magnetic substance layer absorbs the frequency components of the oscillation of the active element, whereby oscillation of the active element is easily prevented. Further, since the magnetic substance layer is disposed on the bias line, unwanted increase in the chip area of the integrated circuit device due to the use of the prior art oscillation preventing circuit is avoided.

REFERENCES:
patent: 3959874 (1976-06-01), Coucoulas
patent: 5138431 (1992-08-01), Huang et al.
patent: 5469334 (1995-11-01), Balakrishnan

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