Integrated circuit device

Details Integrated circuit device Integrated circuit device

1975-04-09

1976-09-14

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307214, 307215, 331 57, H03K 1908, H03K 1920, H03B 504

Patent

active

039808963

ABSTRACT:
In an integrated circuit device with a propagation delay time almost independent of the fluctuation of the quality of the gate oxide layer and the fluctuation of power source voltage, a MOS logic element comprises a driving MOS transistor circuit including a p-channel or an n-channel enhancement type MOS transistor for a switching operation, and a load MOS transistor circuit, connected to said enhancement type MOS transistor and including an n-channel or a p-channel depletion type MOS transistor with a threshold voltage about two times higher than that of said enhancement type MOS transistor, for operating as a load of said driving MOS transistor circuit.

REFERENCES:
patent: 3700981 (1972-10-01), Masuhara et al.
moore, "MOS Transistor Current Switch"; IBM Tech. Discl. Bull.; vol. 9, No. 6, pp. 698-9; 11/1966.
Lohman, "Applications of MOSFETs in Microelectronics"; SCP and Solid-State Technology (pub.); pp. 23-29; 3/1966.
Nat'l Semiconductor Corp. (pub.); 10/1968; "MM480/MM580 dual MOS three-input NOR gate"; 4 pages.

Affiliated with

Also associated with

Rating

Integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1028424