Integrated circuit containing bi-polar and complementary MOS tra

Details Integrated circuit containing bi-polar and complementary MOS tra Integrated circuit containing bi-polar and complementary MOS tra

1990-12-21

1992-03-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 59, 357 43, H01L 21265, H01L 2970

Patent

active

051008114

ABSTRACT:
An integrated circuit containing bipolar and complementary MOS transistors wherein the base and emitter terminals of the bipolar transistor, as well as the gate electrodes of the MOS transistors, are composed of a silicide or of a double layer polysilicon silicide. The base and emitter terminals, as well as the gate electrodes, are arranged in one level of the circuit and there p.sup.+ doping or, respectively, n.sup.+ doping proceeds by ion implantation in the manufacture of the source/drain zones of the MOS transistors. As a result of the alignment independent spacing between the emitter and the base contact, the base series resistance is kept low and a reduction of the space requirement is achieved. Smaller emitter widths are possible by employing the polycide or silicide as diffusion source and as the terminal for the emitter. The size of the bipolar transistor is not limited by the metallization grid, since the silicide terminals can be contacted via the field oxide. The integrated semiconductor circuit is employed in VLSI circuits having high switching speeds.

REFERENCES:
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patent: 4521952 (1985-06-01), Riseman
patent: 4529456 (1985-07-01), Anzai et al.
patent: 4554572 (1985-11-01), Chaterjee
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patent: 4927776 (1990-05-01), Soejima
Murarka et al., "Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects"-IEEE Transactions on Electron Devices, vol. E27, Aug. 1980 pp. 1409-1417.
"Method to Reduce Mechanical Stress within the Emitter of Bipolar Transistors"-IBM Technical Disclosure Bulletin-vol. 28, No.4, Sep. 1985 p. 1442.

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