Integrated circuit contact technique

Details Integrated circuit contact technique Integrated circuit contact technique

1984-04-09

1985-08-20

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29577C, 29578, 148 15, 148187, 357 91, H01L 21265, H01L 2978, B01J 1700

Patent

active

045355320

ABSTRACT:
Source-drain to substrate shorts and allied problems related to misalignment of contact windows are curable in CMOS technology by a non-selective implant into the contact windows of both types. Key to success of the technique is designing devices and masks so the problem develops on one type of device in preference to the other and tailoring the dopant levels so the non-selective implant will selectively type-convert desired regions.

REFERENCES:
patent: 4235011 (1980-11-01), Butler et al.
patent: 4342149 (1982-08-01), Jacobs et al.
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4406710 (1983-09-01), Davies et al.
patent: 4411058 (1983-10-01), Chen
Bassous et al., IBM-TDB, 25, (1982), 3353.
Bakeman et al., IBM-TDB, 25, (1982), 3498.
Rideout, IBM-TDB, 22, (1980), 3861.

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