Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1997-06-30
2000-05-02
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257640, 257641, 257649, 257650, H01L 2358, H01L 2348, H01L 2352
Patent
active
060576049
ABSTRACT:
A technique for forming integrated circuit device contacts includes the formation of nitride spacers along side gate electrodes for LDD definition. In addition, a nitride cap layer is formed over the gate electrodes. When a contact opening is formed through the interlevel oxide dielectric, the nitride cap and sidewall spacers protect the gate electrode from damage and shorting. A highly doped poly plug is formed in the opening to make contact to the underlying substrate. Metalization is formed over the poly plug in the usual manner.
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Clark Jhihan B.
Galanthay Theodore E.
Jorgenson Lisa K.
Saadat Mahshid
STMicroelectronics Inc.
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