Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2007-04-03
2007-04-03
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257S617000, C257S622000, C257S623000, C257S635000, C257S668000, C257S783000, C257S254000, C257S415000, C257S420000
Reexamination Certificate
active
10641264
ABSTRACT:
An integrated circuit is formed on a non-planar substrate. The integrated circuit is formed over a plurality of layers. Chemical or physical changes in the microstructure of the substrate cause the bending of the substrate, in one or more propagation directions.
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Janke Marcus
Laackmann Peter
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Pert Evan
Stemer Werner H.
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