Integrated circuit conductors that avoid current crowding

Details Integrated circuit conductors that avoid current crowding Integrated circuit conductors that avoid current crowding

1997-11-18

1999-10-19

Williams, Alexander Oscor

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257700, 257701, 257774, 257786, 257921, H01L 2348, H05K 114, H05K 105

Patent

active

059694211

ABSTRACT:
An integrated circuit and method of use provides conductive vias between conductor layers so that current flows in such a manner that current crowding is reduced in at least one underlying layer. In particular, the current flows from an overlying conductor (306) down to an underlying conductor (303) by a first set of vias (307), and a portion flows through the underlying conductor towards the destination (e.g., a bondpad). Another portion of the current flows downward to a still lower conductor by means of a second set of vias (310, 311). The second set of vias is located further away from the destination than the first set of vias. Current crowding in the underlying conductor is thereby reduced. An integrated circuit utilizing the inventive technique typically has transistors formed in the semiconductor substrate, wherein at least one of the electrodes (e.g., gate, source or drain in the case of field effect transistors) connects to one or more of the illustrated conductors by means of a "window" opening in an intervening dielectric layer. However, other types of devices, including for example optical, magnetic, ferroelectric, capacitive, and/or inductive devices, may be formed in the substrate and contacted by the overlying conductors.

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