Fishing – trapping – and vermin destroying
Patent
1986-02-24
1988-03-15
Kittle, John E.
Fishing, trapping, and vermin destroying
430396, 430311, 1566591, 148DIG19, 148DIG147, 148DIG152, 437200, G03C 500, G03C 504, H01L 2100, B44C 122
Patent
active
047313188
ABSTRACT:
A novel MOS transistor structure comprises electrodes of metallic silicide and especially tantalum silicide. In the case of the gate electrode, the silicide is directly in contact with an insulating thin-film layer. In the case of the drain and source electrodes, the silicide is directly in contact with the monocrystalline silicon. The method of fabrication is thus simplified while avoiding the use of polycrystalline silicon.
REFERENCES:
patent: 4384301 (1983-05-01), Tasch et al.
patent: 4505027 (1985-03-01), Schwabe et al.
patent: 4593454 (1986-06-01), Baudrant et al.
Refractory Silicides for Integrated Circuits, S. P. Murarka, J. Voc. Sci. Technol., 17(4), Jul./Aug. 1980, pp. 775-792.
IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984, pp. 1329-1334, IEEE, New York, US; Hidekazu Okabayashi et al., "Low Resistance MOS Technology Using Self-Aligned Refractory Silicidation".
IBM Technical Disclosure Bulletin, vol. 25, No. 3B, Aug. 1982, pp. 1396, 1397, New York, US; H. J. Geipel et al.: "Process for Simultaneously Making Silicide Gate, Source and Drain Electrodes".
Borel Joseph
Roche Alain
Kittle John E.
Ryan Patrick J.
Societe pour l'Etude et la Fabrication des Circuits Integres Spe
LandOfFree
Integrated circuit comprising MOS transistors having electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit comprising MOS transistors having electrodes , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit comprising MOS transistors having electrodes will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1926353