Integrated circuit comprising mirrors buried at different...

Details Integrated circuit comprising mirrors buried at different... Integrated circuit comprising mirrors buried at different...

2011-03-08

2011-03-08

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257S444000, C257S463000, C257S079000

Reexamination Certificate

active

07902621

ABSTRACT:
A semiconductor structure including a first active area under which is buried a first reflective layer and a least one second active area under which is buried a second reflective layer, wherein the upper surface of the second reflective layer is closer to the upper surface of the structure than the upper surface of the first reflective layer.

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patent: WO 2008017490 (2008-02-01), None
French Search Report dated Oct. 2, 2008 from French Patent Application No. 08/51494.

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