Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
1999-02-01
2001-02-27
Meier, Stephen D. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S630000, C257S652000
Reexamination Certificate
active
06194750
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to integrated circuits in general, and, more particularly, to integrated circuits that comprise structures (e.g., transmission lines, inductors, capacitors, etc.) that manipulate high frequency signals.
BACKGROUND OF THE INVENTION
An integrated circuit as formed on a semiconductor wafer typically comprises a variety of basic electrical components (e.g., transistors, diodes, capacitors, etc.) and leads for conducting signals to and from those components. When such an integrated circuit operates at a high frequency, the degree of parasitic capacitance and inductance and signal cross-talk that is induced can severely hinder the performance of the integrated circuit. This is particularly true if the integrated circuit has a conductive substrate.
Therefore, the need exists for an improved integrated circuit that can operate at a high frequency without the performance drawbacks associated with integrated circuits in the prior art.
SUMMARY OF THE INVENTION
Some embodiments of the present invention are capable of improving the performance of integrated circuits without the costs and restrictions associated with techniques in the prior art. In particular, some embodiments of the present invention comprise structures that confine, shield and/or manipulate the electric fields that are generated by signals within the integrated circuit so as to improve the performance of the integrated circuit. Although embodiments of the present invention are advantageous for use on many integrated circuits, they are particularly well suited for use with integrated circuits that are disposed on conductive substrates and that operate at high frequencies.
In some of the illustrative embodiments described below, conductive elements are used to form structures near and/or around the leads to and from devices. When the structures are grounded, they function to (at least) partially shield the leads in a manner that is analogous to stripline, microstrip and coaxial cable. Because the electric fields emanating from the leads terminate in the grounded structures and not in the substrate of the integrated circuit, the severity of parasitic capacitance and inductance and signal cross-talk can be substantially mitigated. This, in turn, improves the signal-to-noise. ratio of the signals on the leads and enables the integrated circuit to perform better at high frequency.
In some embodiments of the present invention, passive high-frequency signal components (e.g., couplers, filters, capacitors, etc.) are formed as part of an integrated circuit. For example, in one of the illustrative embodiments of the present invention described below, an inductor is created with the shape of a helix such that the axis of the helix is parallel to the plane in which the substrate lies. This enables inductors with large inductance to be created on an integrated circuit with a small cost in terms of real estate.
An illustrative embodiment of the present invention comprises: an integrated circuit comprising: a first lead and a second lead that are made from a first conductive layer; a substrate; a first plate and a second plate that are made from a second conductive layer; wherein said first plate is sandwiched between and electrically insulated from said first lead and said substrate, said second plate is sandwiched between and electrically insulated from said second lead and said substrate, and said first plate and said second plate are electrically connected.
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Carroll Michael Scott
Ivanov Tony Georgiev
Martin Samuel Suresh
Breyer Wayne S.
DeMont Jason Paul
DeMont & Breyer LLC
Lucent Technologies - Inc.
Meier Stephen D.
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