Integrated circuit comprising complementary field effect transis

Details Integrated circuit comprising complementary field effect transis Integrated circuit comprising complementary field effect transis

1987-11-05

1989-01-17

James, Andrew J.

357 42, 357 90, H01L 2978

Patent

active

047990929

ABSTRACT:
An integrated circuit comprising complementary field effect transistors which are both of the normally-off depletion type. These transistors have, in the channel region a surface layer which has the same conductivity type as the adjoining source and drain zones. The surface layers comprise, per unit surface area, a quantity of dopant which is at least equal to the charge per unit surface area in the part of the substrate region which adjoins the surface layer and which is depleted if the threshold voltage is applied between the gate electrode and the source and drain zones. The gate electrodes comprise semiconductor material of opposite conductivity types.

REFERENCES:
patent: 3673471 (1972-06-01), Klein
patent: 4178605 (1979-12-01), Hsu
patent: 4472871 (1984-09-01), Green
patent: 4476482 (1984-10-01), Scott
IEDM Technical Digest, Dec. 4-6, 1978, pp. 26-29 by Nishiuchi.

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