Integrated circuit comprising a protection diode array

Details Integrated circuit comprising a protection diode array Integrated circuit comprising a protection diode array

1993-03-25

1994-08-16

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

257355, 257481, 257484, 257603, H01L 29161, H01L 29205, H01L 29225

Patent

active

053389646

ABSTRACT:
An integrated circuit including an array of diodes includes first Schottky diodes, each of which is connected by its cathode to a point to be protected and by its anode to a reference voltage, and second Schottky diodes, each of which is connected by its anode to a point to be protected and by its cathode to the cathode of an avalanche diode, the anode of which is connected to the reference voltage. This integrated circuit includes, in a P-type substrate, a first and a second group of N-type wells; an ohmic contact and a Schottky contact on each well; an N-type region on the upper surface of the substrate; a metallization connecting the ohmic contacts of the first group of wells to the N-type region; a metallization connecting the Schottky contacts of the second wells; metallizations respectively connecting a Schottky contact of the second group of wells to an ohmic contact of the first wells; and a rear surface metallization.

REFERENCES:
Patent Abstracts of Japan, vol. 12, No. 24 (E-576) Jan. 23, 1988 & JP-A-62 179 756 (Sanyo Electric).

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