Integrated circuit composed of group III-V compound field effect

Details Integrated circuit composed of group III-V compound field effect Integrated circuit composed of group III-V compound field effect

1990-07-18

1991-11-26

Carroll, J.

357 22, 357 34, 357 43, 357 44, H01L 29161, H01L 2980, H01L 2972, H01L 2702

Patent

active

050687565

ABSTRACT:
Integrated circuits and fabrication methods incorporating both NPN (192, 194, 210) and PNP (196, 121, 124) heterojunction bipolar transistors together with N channel (198, 200, 216, 218) and P channel (202, 204, 220, 222) JFETs on a single substrate as illustrated in FIG. 10. MESFETs may also be integrated on the substrate.

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H. Kawai et al., A Collector-Up AlGaAs/GaAs Heterojunction Bipolar Transistor Fabricated Using Three-Stage MOCVD, 9 IEEE Elec. Dev. Lett. 419 (1988) pp. 419-421.

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