Patent
1984-05-14
1987-05-26
James, Andrew J.
357 237, 357 15, 357 232, H01L 2904, H01L 2954
Patent
active
046689680
ABSTRACT:
There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a body of germanium semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors comprises rectifying contacts formed on or in the body of germanium semiconductor material. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.
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patent: 4226898 (1980-10-01), Ovshinsky et al.
Matsui et al., "Thin-Film Transistors on Molecular-Beam-Deposited Polycrytalline Silicon," J. of Applied Physics, vol. 55, No. 6, 3/15/84, pp. 1590-1595.
Ymasaki et al., "A Liquid Crystal TV Display Panel with Drivers," SID 82 Digest, pp. 48 and 49.
Fischer et al., "P-Type TFT w/Vacuum-Deposited Cryst. Cu-doped Ge Films," IEEE Elec. Device Letters, vol. EDL-4, No. 12, 12/83.
Hudgens Stephen J.
Ovshinsky Stanford R.
Energy Conversion Devices Inc.
Goldman R. M.
Jackson Jerome
James Andrew J.
Siskind M. S.
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