Integrated circuit compatible thin film field effect transistor

Details Integrated circuit compatible thin film field effect transistor Integrated circuit compatible thin film field effect transistor

1984-08-03

1987-06-16

James, Andrew J.

357 237, 357 15, H01L 2904, H01L 2954

Patent

active

046739572

ABSTRACT:
There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a silicon-germanium alloy body having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors are rectifying contacts formed on or in the body. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.

REFERENCES:
patent: 3304469 (1967-02-01), Weimer
patent: 3924320 (1975-12-01), Altman et al.
patent: 4226898 (1980-10-01), Ovhsinksy et al.
patent: 4581620 (1986-04-01), Yamazaki et al.
Matsui et al. J. Appl. Phys. 55(6) Mar. 15, 1984 pp. 1590-1595.
Fischer et al. "P-Type . . . Germanium Films" Electron Device Lettrs. vol EdL-4, No. 12, Dec. 83.
T. Ymasaki, et al., "A Liquid Crystal TV Display Panel with Drivers," SID 82 Digest, pp. 48 and 49.

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