Integrated circuit compatible planar inductors with increased Q

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257295, 257258, 257277, 257278, 257508, 257758, 257659, 333172, 333246, H01L 2900, H03H 700

Patent

active

057604568

ABSTRACT:
A planar inductor structure with improved Q compatible with typical integrated circuit fabrication. The structure includes a spiral inductor with a conductive plane between the resistive substrate of the integrated circuit and the spiral inductor which reduces the power loss of the inductor. A pattern of segments may be formed in the conductive material of conductive plane to prevent eddy currents from flowing through the conductive plane and reducing the inductance of the spiral inductor. The Q of the inductor can be enhanced by optimizing the pattern in which the segmented conductive plane is formed. The segmented conductive plane may be fabricated out of metal, polysilicon or a heavily-doped region of the substrate.

REFERENCES:
patent: 5015972 (1991-05-01), Cygan et al.
patent: 5095357 (1992-03-01), Andoh et al.
patent: 5384274 (1995-01-01), Kanechachi
patent: 5446311 (1995-08-01), Ewen et al.
patent: 5461353 (1995-10-01), Eberhardt

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