Integrated circuit chip wiring structure with crossover capabili

Details Integrated circuit chip wiring structure with crossover capabili Integrated circuit chip wiring structure with crossover capabili

1996-11-22

1998-10-06

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257776, 257923, 438660, 438637, H01L 2348

Patent

active

058181105

ABSTRACT:
An integrated circuit chip wiring structure having crossover and contact capability without an interlock via layer and a method of making the wiring structure all disclosed. The method utilizes a multi-damascene approach, using the standard damascene processing steps to wire the first, then metallization layer, then providing the second, thick metallization layer with first regions for metal wire. A conformal coating is deposited, filling the second regions but not the first regions. When an etch is performed, the layers underlying the second regions are exposed but not those underlying the second regions. Therefore, it is possible to selectively expose the metal lines in the first layer so that electrical connection is made with the metal wire of the second layer in the exposed areas. Electrical isolation is maintained in the narrower, second regions of metal wire.

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