Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads
Patent
1995-09-22
1997-04-29
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Beam leads
257737, 257778, H01L 2348
Patent
active
056252307
ABSTRACT:
An integrated circuit chip structure, which prevents electrical shorts between adjacent electrodes and contributes to miniaturization, and a method for forming an integrated circuit chip structure are provided. A first electrode of a predetermined pattern is formed on the integrated circuit chip and a second electrode is formed on a base in correspondence with the first electrode. A first adhesive made of elastomer is deposited on the second electrode and a conductive metal substance is coated thereon. Finally, the second electrode is joined with the first electrode by pressure, after a second adhesive is deposited on the upper surface of the metal substance.
REFERENCES:
patent: 5336547 (1994-08-01), Kawakita et al.
patent: 5477087 (1995-12-01), Kawakita et al.
patent: 5508561 (1996-04-01), Tago et al.
IBM Technical Disclosure Bulletin "Encapsulated Solder Joint for Chip Mounting" vol. 32 No. 10B Mar. 1990 p. 480.
Lee Chang-Hoon
Park Jin-woo
Crane Sara W.
Potter Roy
Samsung Display Devices Co. Ltd.
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