Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1996-07-30
1998-02-24
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257500, 257506, 257510, 257513, 257374, 257397, 257392, H01L 2976, H01L 2900
Patent
active
057214484
ABSTRACT:
An integrated circuit with FETs having an essentially uniform gate oxide thickness and FETs having gate oxide thickness enhanced along the sides. FETs with enhanced gate oxide have an ONO layer diffused with potassium in close proximity to the enhanced (thicker) oxide, and, as a result, have a slightly higher V.sub.t and much more attenuated soft turn on.
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Hauf Manfred
Levy Max G.
Nastasi Victor Ray
Abraham Fetsum
International Business Machines - Corporation
Neff, Esq. Daryl K.
Thomas Tom
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