Integrated circuit chip formed with a capacitor having a low vol

Details Integrated circuit chip formed with a capacitor having a low vol Integrated circuit chip formed with a capacitor having a low vol

1990-08-24

1992-02-04

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 357 51, H01G 1015, H01G 410, H01G 700

Patent

active

050863703

ABSTRACT:
An integrated-circuit (IC) chip formed with a capacitor comprising a lower layer of polysilicon clad with a thin film of TiSi.sub.2 serving as the lower plate of the capacitor, a layer of dielectric, a thin film of titanium nitride (TiN) on the upper surface of the dielectric to serve as the upper plate of the capacitor, a second layer of polysilicon (doped with phosphorous) over the TiN film, and metallization to make contact with the top plate of the capacitor.

REFERENCES:
patent: 4589056 (1986-05-01), Stimmell
patent: 4628405 (1986-12-01), Lippert
patent: 4638400 (1987-01-01), Brown et al.

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