Integrated circuit capacitor structure

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S535000

Reexamination Certificate

active

07154162

ABSTRACT:
Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

REFERENCES:
patent: 5194932 (1993-03-01), Kurisu
patent: 5208726 (1993-05-01), Apel
patent: 5563762 (1996-10-01), Leung et al.
patent: 5583359 (1996-12-01), Ng et al.
patent: 5879985 (1999-03-01), Gambino et al.
patent: 6034411 (2000-03-01), Wade et al.
patent: 6064108 (2000-05-01), Martinez
patent: 6180976 (2001-01-01), Roy
patent: 6184567 (2001-02-01), Fujisawa et al.
patent: 6365954 (2002-04-01), Dasgupta
patent: 6534374 (2003-03-01), Johnson et al.
patent: 6710425 (2004-03-01), Bothra
patent: 6756282 (2004-06-01), Nagano et al.
patent: 6784478 (2004-08-01), Merchant et al.
patent: 6800923 (2004-10-01), Yamamoto
patent: 6881996 (2005-04-01), Chen et al.
patent: 2005/0063135 (2005-03-01), Borland et al.
patent: 1119027 (2001-07-01), None
patent: 1182708 (2002-02-01), None
patent: 63239970 (1988-10-01), None
Lin, et al. “Single Mask Metal-Metal-Insulator-Metal (MIM) Capacitor with Copper Damascene Metallization for Sub-018μm Mixed Mode Signal and System-on-a Chip (SoC) Applications” IEEE 2000, pp. 111-113, no month cited.
M. Armacost, et al. “A High Reliability Metal Insulator Metal Capacitor for 0.18μm Copper Technology” IEEE 2000, IEDM, pp. 157-160, no month cited.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuit capacitor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit capacitor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit capacitor structure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3718652

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.