Integrated circuit capacitor

Details Integrated circuit capacitor Integrated circuit capacitor

1998-06-19

2000-05-02

Fahmy, Wael

Semiconductor device manufacturing: process

Making passive device

438391, H01L 2120

Patent

active

060572035

ABSTRACT:
A capacitor may be formed by implanting after forming a dielectric and a conductive layer over a semiconductor structure. This diminishes the implant damage to the region underneath the conductive layer. Implanted impurities may be driven under the conductive layer such that two opposed impurity profiles overlap. This forms a junction under the conductive layer.

REFERENCES:
patent: 3975220 (1976-08-01), Quinn et al.
patent: 4466177 (1984-08-01), Chao
patent: 4746377 (1988-05-01), Kobayashi et al.
patent: 5006480 (1991-04-01), Chang et al.
patent: 5168075 (1992-12-01), Kuo
patent: 5173835 (1992-12-01), Cornett et al.
patent: 5753559 (1998-05-01), Yew et al.
patent: 5861651 (1999-01-01), Brasen et al.
patent: 5981349 (1999-11-01), Hebert

Affiliated with

Also associated with

Rating

Integrated circuit capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1593318