Integrated circuit bipolar transistor

Details Integrated circuit bipolar transistor Integrated circuit bipolar transistor

2006-09-19

2009-11-10

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S318000, C438S320000, C438S337000, C438S339000, C438S360000, C257S198000, C257S588000, C257S592000, C257S593000, C257SE21371, C257SE21379, C257SE29193

Reexamination Certificate

active

07615455

ABSTRACT:
A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an external upper peripheral region of the base region, a second insulating region in contact with an intermediary upper peripheral region of the base region, an emitter region in contact with the central portion of the base region. The level of the central portion is higher than the level of the intermediary portion.

REFERENCES:
patent: 5321301 (1994-06-01), Sato et al.
patent: 5391503 (1995-02-01), Miwa et al.
patent: 5798561 (1998-08-01), Sato
patent: 6399993 (2002-06-01), Ohnishi et al.
French Search Report from corresponding French Application No. 0552818, filed Sep. 20, 2005.
Chevalier, P. et al., 180 GHzft and fmax Self-Alligned SiGeC HBT Using Selective Epitaxial Growth of the Base, European Solid-State Device Research, 2003 33rdConference on ESSDERC '03, Sep. 16-18, 2003, Piscataway, NJ, IEEE, Sep. 16, 2003, pp. 299-302, XP010676656.

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