Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1984-09-04
1986-11-11
Edlow, Martin H.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 44, 357 86, 357 34, 365175, 365156, 365181, H01L 2904, H01L 2702, H01L 2970
Patent
active
046225757
ABSTRACT:
A static bipolar random access memory cell includes first and second transistors formed in epitaxial silicon pockets 41 and 42 in a substrate. The collectors 19 and 19' and bases 15 and 15' of the transistors are interconnected with polycrystalline silicon 21 doped to match the conductivity types of the regions contacted. Undesired PN junctions 40 and 40' created thereby are shorted using an overlying layer of a metal silicide 25. In a region overlying the N conductivity type polycrystalline silicon 23 or 23', the metal silicide is removed and a PH junction 37 or 37' created by depositing P conductivity type polycrystalline silicon 35c or 35c'. If desired additional P type polycrystalline silicon 35a and 35b may be deposited across the surface of the epitaxial layer where the base regions of the two transistors are formed to reduce the base series resistance.
REFERENCES:
patent: 4322821 (1982-03-01), Lohstroh et al.
patent: 4380708 (1983-04-01), Hart
patent: 4398338 (1983-08-01), Tickle et al.
patent: 4412239 (1983-10-01), Iwasaki et al.
patent: 4512075 (1985-04-01), Vora
Okada et al, "PSA . . . LSI", IEEE J. of Solid State Cir., Vol. Sc-13, No. 5, Oct. 1978, pp. 693-697.
IBM Technical Disclosure, vol. 22, No. 7, Dec. 1979, pp. 2786-2788, N.Y., US: H. H. Berger et al: "Double Polysilicon MTL Structure".
IBM Technical Disclosure, vol. 21, No. 12, May 1979, p. 4886, N.Y., US: H. H. Berger: "Cross-Coupled Flip-Flop Transistors with Stacked Interconnection Lines".
Herndon William H.
Vora Madhukar B.
Carroll David H.
Colwell Robert C.
Edlow Martin H.
Fairchild Semiconductor Corporation
Jackson, Jr. Jerome
LandOfFree
Integrated circuit bipolar memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit bipolar memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit bipolar memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-379783