Integrated circuit bimetal layer

Details Integrated circuit bimetal layer Integrated circuit bimetal layer

1984-04-25

1986-01-21

James, Andrew J.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 67, 357 65, 427 89, H01L 2348, B05D 512

Patent

active

045660263

ABSTRACT:
Disclosed is a bimetal layer located between two portions of an integrated circuit, the bimetal layer comprising a layer of TiWN and a layer of TiN.

REFERENCES:
Applied Physics Letters, vol. 23, #2, 7/15/73, by Bower, pp. 99-101.
Thin Solid Films, #96, 4/8/82, pp. 301-316, by Ho.
Thin Solid Films, #73, 4/25/80, pp. 245-254, by Jamal et al.
Journal of Electrochemical Society; Solid State Science & Tech., May 1983, by Suni et al.
Paper of the Intl. Conference on Metallurgical Coatings, San Diego, Calif., Apr. 23-27, 1979, pp. 191-203.
Journal of Vacuum Science Technology, vol. 21, May/Jun. 1982, pp. 14-18, by Ting.
Thin Solid Films, #96, 1982, pp. 327-345, by Ting.
IEEE Transactions on Electron Devices, vol. 27, #4, Apr. 1980, pp. 873-876, by Seefeld.
Applied Physics Letters, vol. 36, Mar. 15, 1980, pp. 456-458, by Wittmer.
Thin Solid Films, #93, 1982, pp. 397-405, by Wittmer.
Journal of Applied Physics, Mar. 1983, pp. 1423-1428, by Wittmer.

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