Integrated circuit barrier structure

Details Integrated circuit barrier structure Integrated circuit barrier structure

1996-06-28

1997-09-23

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257753, 257767, 257763, 257915, H01L 2348, H01L 2359, H01L 2940

Patent

active

056708238

ABSTRACT:
A barrier metal integrated circuit structure, including relatively thin, highly nitrided layers of TiW (i.e., TiW:N) straddling a central conductor layer, and in turn each being straddled by adjacent layers of relatively thick substantially un-nitrided TiW material, and a method for its fabrication including deposition of layers of TiW and TiW:N, the latter in a N.sub.2 dominated atmosphere and/or under backbias conditions effective for establishing at least a saturated level of nitrogen into the TiW:N, resulting in an effective barrier to migration of conductor materials from the conductor layer.

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High-Temperature Contact Structures for Silicon Semiconductor Devices Wittmer, Appl. Phys. Lett. 37(6), Sep. 15, 1980 pp. 540-542.
A Quarter-Micrometer Interconnection Technology Using a TiN/A1-Si-Cu/TiN/A1-Si-Cu/TiN/Ti Multilayer Structure, Kikkawa et al. IEEE vol. 40. No., 2, Feb. 1993, pp. 296-302.

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