Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-06-14
2011-06-14
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S734000, C257S750000, C257S753000, C257S758000, C257SE23001, C257SE23142, C257SE23157, C257SE23163, C257S768000
Reexamination Certificate
active
07960832
ABSTRACT:
An integrated circuit arrangement includes an electrically conductive conduction structure made from copper or a copper alloy. At a side wall of the conduction structure, there is a layer stack which includes at least three layers. Despite very thin layers in the layer stack, it is possible to achieve a high barrier action against copper diffusion combined with a high electrical conductivity, as is required for electrolytic deposition of copper using external current.
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Japanese Office Action, with English translation, dated Apr. 27, 2010 (8 pages).
Japanese Office Action, with English translation, dated Aug. 17, 2010 (6p).
Brinks Hofer Gilson & Lione
Chi Suberr
Infineon - Technologies AG
Vu David
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