Integrated circuit arrangement having PNP and NPN bipolar...

Details Integrated circuit arrangement having PNP and NPN bipolar... Integrated circuit arrangement having PNP and NPN bipolar...

2006-05-02

2006-05-02

Owens, Douglas W (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C438S235000

Reexamination Certificate

active

07038255

ABSTRACT:
An explanation is given of, inter alia, an integrated circuit arrangement (100) containing an npn transistor (102) and a pnp transistor (104). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout (142) for an edge terminal region (120) and if the edge terminal region (120) has a part near the substrate which is arranged in the cutout (142) and a part remote from the substrate which is arranged outside the cutout (142) and overlaps the base terminal region (139).

REFERENCES:
patent: 3611067 (1971-10-01), Oberlin et al.
patent: 2002/0168829 (2002-11-01), Bock et al.
patent: 197 02 320 (1998-07-01), None
patent: 0 137 906 (1985-04-01), None
patent: 1 039 532 (2000-09-01), None
patent: 1448776 (1964-11-01), None
patent: 1121495 (1968-07-01), None

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