Integrated circuit arrangement having at least one IGBT

Details Integrated circuit arrangement having at least one IGBT Integrated circuit arrangement having at least one IGBT

1996-02-12

1998-06-02

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257140, 257143, 257146, 257355, 257378, 257477, 257577, H01L 2974

Patent

active

057604240

ABSTRACT:
An integrated circuit arrangement includes an IGBT, provided with a secondary contact connected with the drift area, and a diode connected between the secondary contact and the anode of the IGBT. The cathode of the diode is connected with the anode of the IGBT and the anode of the diode is connected with the secondary contact of the IGBT. In this way the pn-junction of the IGBT, formed through the drift area and the channel area, can be used as an internal free-running diode of the IGBT.

REFERENCES:
patent: 4901127 (1990-02-01), Chow et al.
patent: 5070377 (1991-12-01), Harada
patent: 5360984 (1994-11-01), Kirihata
Patent Abstracts of Japan, Publication No. 02078275, published Mar. 19, 1990 Japanese Application No. 63228671.
Patent Abstracts of Japan, Publication No. 60098671, published Jun. 1, 1985, Japanese Application No. 58204879.
"Lateral Resurfed COMFET," Darwish et al., vol. 20, No. 12, pp. 519-520 (9184)--Jan. 1984.

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